Method of manufacturing a semiconductor device using a metal whi

Details Method of manufacturing a semiconductor device using a metal whi Method of manufacturing a semiconductor device using a metal whi

1996-02-16

1998-10-13

Bowers, Jr., Charles L.

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438406, 438458, 438977, 349 45, 257 72, H01L 2184

Patent

active

058211381

ABSTRACT:
A method of manufacturing a semiconductor device, comprises the steps of: forming a first insulating film on a first substrate; forming a second insulating film on the first insulating film; forming an amorphous silicon film on the second insulating film; holding a metal element that promotes the crystallization of silicon in contact with a surface of the amorphous silicon film; crystallizing the amorphous silicon film through a heat treatment to obtain a crystalline silicon film; forming a thin-film transistor using the crystalline silicon film; forming a sealing layer that seals the thin-film transistor; bonding a second substrate having a translucent property to the sealing layer; and removing the first insulating film to peel off the first substrate.

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patent: 5488012 (1996-01-01), McCarthy
patent: 5529937 (1996-06-01), Zhang et al.
patent: 5618739 (1997-04-01), Takahashi et al.
K. Sumiyoshi et al., IEDM 1989 Proc., p. 165, "Device layer transferred poly si TFT array for high resolution liquid crystal projector".

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