Method and apparatus to operate a memory cell

Details Method and apparatus to operate a memory cell Method and apparatus to operate a memory cell

2001-12-28

2003-12-23

Le, Vu Anh (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S173000

Reexamination Certificate

active

06667900

ABSTRACT:

BACKGROUND
While operating memory cells (e.g., during programming and reading of memory cells), a voltage potential may be applied to the selected or targeted memory cells to read or program the memory cell. During these operations, the states of the unselected memory cells in the array may be affected. To avoid disturbing unselected memory cells, a relatively large reverse bias may be applied to the unselected memory cells. However, this may result in relatively large reverse leakage currents in the unselected cells and may adversely affect the power consumption of the system.
Thus, there is a continuing need for better ways to operate memory cells in memory systems.


REFERENCES:
patent: 3271591 (1966-09-01), Ovshinsky
patent: 3530441 (1970-09-01), Ovshinsky
patent: 3699543 (1972-10-01), Neale
patent: 5296716 (1994-03-01), Ovshinsky et al.
patent: 5789758 (1998-08-01), Reinberg
patent: 5818749 (1998-10-01), Harshfield
patent: 5879955 (1999-03-01), Gonzalez et al.
patent: 5883827 (1999-03-01), Morgan
patent: 5920788 (1999-07-01), Reinberg
patent: 5933365 (1999-08-01), Klersy et al.
patent: 5970336 (1999-10-01), Wolstenholme et al.
patent: 5998244 (1999-12-01), Wolstenholme et al.
patent: 6002140 (1999-12-01), Gonzalez et al.
patent: 6031287 (2000-02-01), Harshfield
patent: 6085341 (2000-07-01), Greason et al.
patent: 6087674 (2000-07-01), Ovshinsky et al.
patent: 6141241 (2000-10-01), Ovshinsky et al.
patent: 6153890 (2000-11-01), Wolstenholme et al.
patent: 6229157 (2001-05-01), Sandhu
U.S. patent application, pending, Xu et al., 09/895,599, filed Jun. 29, 2001.
U.S. patent application, pending, Tyler Lowrey. 09/921,853, filed Aug. 2, 2001.

Affiliated with

Also associated with

Rating

Method and apparatus to operate a memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method and apparatus to operate a memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method and apparatus to operate a memory cell will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3126464