Non-volatile magnetic register

Details Non-volatile magnetic register Non-volatile magnetic register

2001-01-31

2003-02-04

Elms, Richard (Department: 2824)

Static information storage and retrieval

Systems using particular element

Magnetic thin film

C365S154000

Reexamination Certificate

active

06515895

ABSTRACT:

FIELD OF THE INVENTION
This invention relates to registers, such as flip-flops, shift registers and the like, and more specifically to various magnetic registers that are non-volatile.
BACKGROUND OF THE INVENTION
Non-volatile registers are data storage circuits which retain stored information in the absence of power. Current non-volatile registers use flash memory cells to accomplish data storage in a non-volatile fashion. One problem with the use of flash memory cells is the fact that the accompanying memories in devices such as computers and the like are formed from different types of memory cells, e.g. magnetic random access memory (MRAM) cells and the like. Using different types of memory cells results in a requirement for different fabrication processes, which can substantially increase the complexity of the manufacturing process and, thereby, greatly increase the cost.
A type of magnetic register has been proposed, which uses spin dependent magnetic tunneling memory cells (see for example, U.S. Pat. No. 6,021,065, entitled “Spin Dependent Tunneling Memory”, issued Feb. 1, 2000). Generally, these types of devices suffer from metastablity problems. Also, the magnetic tunnel junctions are operated in the major magnetic loop, which makes them slow and the programming requires relatively high currents.
The present invention also contemplates the fabrication of non-volatile shift registers and, to date, no non-volatile shift registers have been proposed. Thus, no prior art for non-volatile shift registers is known at this time.
Accordingly it is highly desirable to provide non-volatile registers which overcome these problems.


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“Differential type giant magnetoresistive memory using spin-valve film with a NiO pinning layer,” Yamane et al., Journal of Applied Physics, vol. 83, No. 9, May 1, 1998, pp. 4862-4868.

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