Semiconductor device having a single crystal semiconductor layer

Details Semiconductor device having a single crystal semiconductor layer Semiconductor device having a single crystal semiconductor layer

1993-03-29

1996-01-16

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257344, 257408, H01L 2701, H01L 2976, H01L 2994

Patent

active

054850282

ABSTRACT:
In a semiconductor device having a thin SOI film, the thickness of a semiconductor layer formed on an insulating film is so adjusted as to be less than a maximum distance allowable to complete depletion of the layer. While the thickness of a channel region is adjusted to be less than that of impurity-diffusion regions. Further, the insulating layer is so formed to have a thicker portion under the channel region, and thinner portions under the source region and the drain region as the impurity-diffusion regions. The semiconductor layer has steps at the boundaries between the channel region and the impurity-diffusion regions, and the top face of the channel region is arranged so as to be lower than the top faces of the impurity-diffusion regions. A region having a width less than the maximum depletion distance and an impurity concentration larger, than that of the channel region and less than that of the drain region is formed between the channel region and the drain region.

REFERENCES:
patent: 4312680 (1982-01-01), Hsu
patent: 4907053 (1990-03-01), Ohmi
Malhi, S. D. S., et al., "Novel Soi CMOS Design Using Ultra Thin Near Intrinsic Substrate", IEEE, 1982, pp. 107-110.

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