Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-10-30
1994-01-04
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257347, 257275, 427 96, 427 99, 437 83, 437 84, H01L 29161, H01L 2701, H01L 2702, H01L 2348
Patent
active
052763455
ABSTRACT:
The lift-off technique for transferring a preprocessed GaAs circuit to a quartz carrier is used to integrate GaAs active devices with distributed quartz microwave circuit elements (e.g., microstrip circuitry) in a single integrated circuit package. The present invention is therefore useful in making a variety of extremely rugged, low loss millimeter and submillimeter wave integrated circuits. By restricting the GaAs layer to a thin membrane and by impurity-doping the GaAs layer only in the regions of the active devices, the advantages of the quartz substrate in the presence of millimeter wave or submillimeter wave radiation are essentially retained.
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C. Van Hoof, W. De Raedt, M. Van Rossum and G. Borghs, "MESFET lift-off from GaAs substrate to glass host," Electronics Letters, vol. 25, No. 2, 136-137, Jan. 19, 1989.
P. H. Siegel, J. Oswald, R. J. Dengler, D. M. Sheen, and S. M. Ali, "Measured and Computed Performance of a Microstrip Filter Composed of Semi-Insulating GaAs on a Fused Quartz Substrate," IEEE Microwave and Guided Wave Letters, 1, No. 4, Apr. 1991. pp. 78-80.
W. L. Bishop, E. Meilburg, R. J. Mattauch, T. Crowe and L. Poli, "A micron-thickness, planar Schottky diode chip for terahertz applications with theoretical minimum parasitic capacitance," 1990 IEEE MTT-S Int. Mic. Sym. Digest, May 1990, pp. 1305-1308.
Mehdi Imran
Siegel Peter H.
Wilson Barbara
California Institute of Technology
Hille Rolf
Keller Michael L.
Saadat Mahshid
Wallace Robert M.
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