Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-04-21
1999-02-23
Ngo, Ngan V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257410, 257649, H01L 2976, H01L 2994, H01L 31062, H01L 31113
Patent
active
058747664
ABSTRACT:
A semiconductor device is disclosed which comprises a semiconductor substrate and an insulating film disposed on the substrate. The insulating film is a oxynitride film prepared by nitriding a thermal oxide film, which has been formed on the substrate, in an atmosphere of nitriding gas. The nitriding is conducted for a nitridation time of 10.sup.6.6-T.sbsb.N.sup./225 seconds or shorter wherein T.sub.N is the nitridation temperature in degree centigrade, or conducted so as to have a nitrogen concentration of about 8 atomic % or less, at least in the vicinity of the interface between the nitride oxynitride film and the substrate. Also disclosed is a method for the production of the semiconductor device.
REFERENCES:
patent: 4282270 (1981-08-01), Nozaki et al.
patent: 4343657 (1982-08-01), Ito et al.
patent: 4416952 (1983-11-01), Nishizawa et al.
patent: 4621277 (1986-11-01), Ito et al.
patent: 5198392 (1993-03-01), Fukuda et al.
Takashi Hori et al. "Charge-Trapping Properties of Ultrathin Nitrided Oxides Prepared by Rapid Thermal Annealing", IEEE Transactions On Electron Devices, vol. 35, No. 7, Jul. 1988, pp. 904-910.
D. Henscheid et al., "Dielectric Formation by Rapid Thermal Nitridation", Extended Abstracts, vol. 88-2, Oct. 1988, pp. 433-434.
D.K. Shih et al., "Metal-Oxide-Semiconductor Characteristics of Rapid Thermal Nitrided Thin Oxides", Applied Physics Letters, vol. 52, No. 16, May 16, 1988, pp. 1698-1700.
Takashi Ito et al., "Advantages of Thermal Nitride and Nitroxide Gate Films in VLSI Process", IEEE Transactions On Electron Devices, vol. ED-29, No. 4, Apr. 1982, pp. 498-502.
Hori et al., "Charge-Trapping Properties of Ultrathin Nitrided Oxides Prepared by Rapid Thermal Annealing", I.E.E.E. Transactions on Electronic Devices, vol. 35, No. 7, pp. 904-910 (Jul., 1988).
Henscheid et al., "Dielectric Formation by Rapid Thermal Nitridation", Extended Abstracts, vol. 88-2, pp. 433-434 (Oct. 9-14, 1988).
Hori et al., "Improvement of Dielectric Strength . . . Nitrided Oxides", VLSI Symp. Tech. Dig., pp. 63-64 (1987).
Henscheid et al., "RTN of Thin SiO.sub.2 Films", Journal of Electronic Materials, vol. 18, pp. 99-104, No. 2 (1989).
Vasquez & Madhukar, "A Kinetic Model for the Thermal Nitridation of SiO.sub.2 /Si", J. Appl. Phys. 60(1), pp. 234-242 (Jul., 1986).
Moslehi & Saraswat, "Thermal Nitridation of Si and SiO.sub.2 for VLSI", I.E.E.E. Trans. Elec. Dev., vol. Ed. 32, No. 2, pp. 106-113 (Feb. 2, 1985).
Hori et al., "Improvement of Dielectric Integrity of TiSi.sub.x -Polycide-Gate System by Using Rapidly Nitrided Oxides", Journal of the Electrochemical Society, vol. 136, No. 10 (Oct., 1985).
Moslehi et al., "Rapid Thermal Nitridation of SiO.sub.2 for Nitroxide Thin Dielectrics", Appl. Phys. Lett. 47(10), pp. 1113-1115 (Nov., 1985).
Matsushita Electric - Industrial Co., Ltd.
Ngo Ngan V.
LandOfFree
Semiconductor device having an oxynitride film does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device having an oxynitride film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an oxynitride film will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-309880