Semiconductor memory device with three-dimensional cluster distr

Details Semiconductor memory device with three-dimensional cluster distr Semiconductor memory device with three-dimensional cluster distr

1992-10-15

1999-02-23

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257324, G11C 1134, H01L 2978

Patent

active

058747613

ABSTRACT:
A method of producing a semiconductor memory device forms an overlap between a distribution of semiconductor clusters in a gate insulating layer and a drain region by oblique ion implantation using the edge of the semiconductor cluster distribution as a self-align mask. At least a portion of the semiconductor cluster distribution which is the nearest to the Si substrate and the drain overlaps a drain diffusion layer, and the semiconductor clusters are overlapped with each other. Thus, the device has a 1Tr/cell structure. As a result, the properties of a nonvolatile memory device using an insulating film are improved.

REFERENCES:
patent: 3805130 (1974-04-01), Yamazaki
patent: 3878549 (1975-04-01), Yamazaki et al.
patent: 5147811 (1992-09-01), Sakagami
Chan et al., "A True Single-Transistor Oxide-Nitride-Oxide EEPROM Device", IEEE Electron Device Letters, vol. EDL-8, No. 3, Mar. 1987, pp. 93-95.

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