Process for producing semiconductor device with wire for three c

Details Process for producing semiconductor device with wire for three c Process for producing semiconductor device with wire for three c

1994-12-08

1997-09-02

Wilczewski, Mary

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438586, 438637, H01L 21443, H01L 23552, H01L 310224

Patent

active

056630948

ABSTRACT:
A semiconductor device having i) a common opening 110 reaching a conductive region 105 through at least one conductive layer 107 and ii) another conductive layer 109 deposited in the opening 101, the conductive layer 107 and the conductive region 105 being electrically connected in the common opening 110. Also disclosed is a process comprising previously forming a plurality of conductive regions 105 and 107, thereafter forming an opening 110 that opens at the conductive regions, and depositing another conductive region 109 in the opening 110 to electrically connect the respective conductive regions in the opening. This can achieve a wiring connection structure that enables prevention of an increase in the number of masks used to form openings for wiring connection, an increase in the number of steps and an increase in the area held by openings, to thereby enhance the degree of integration of semiconductor devices.

REFERENCES:
patent: 4735908 (1988-04-01), Higashi et al.
patent: 5061979 (1991-10-01), Kobayashi et al.
patent: 5242858 (1993-09-01), Sakamoto et al.
patent: 5294836 (1994-03-01), Kishi
patent: 5304775 (1994-04-01), Fujiwara et al.
patent: 5395650 (1995-03-01), Holl et al.
patent: 5529956 (1996-06-01), Morishita

Affiliated with

Also associated with

Rating

Process for producing semiconductor device with wire for three c does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Process for producing semiconductor device with wire for three c, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Process for producing semiconductor device with wire for three c will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-307682