Method of manufacturing a thin film transistor in which the gate

Details Method of manufacturing a thin film transistor in which the gate Method of manufacturing a thin film transistor in which the gate

1994-07-26

1997-09-02

Wilczewski, Mary

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

438166, 438591, 438762, H01L 21336

Patent

active

056630778

ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of forming a semiconductor film on a substrate, oxidizing a surface of said semiconductor film in an oxidizing atmosphere with said semiconductor film heated or irradiated with light, and further depositing an oxide film on the oxidized surface of the semiconductor film by PVD or CVD. The first oxide film has a good interface condition with the semiconductor film and a characteristics of an insulated gate field effect transistor can be improved if the first oxide film and the second oxide film are used as a gate insulating film.

REFERENCES:
patent: 4675978 (1987-06-01), Swartz
patent: 5028560 (1991-07-01), Tsukamoto et al.
patent: 5294571 (1994-03-01), Fujishiro et al.
patent: 5298436 (1994-03-01), Radosevich et al.
patent: 5322807 (1994-06-01), Chen et al.
patent: 5412493 (1995-05-01), Kunii et al.
patent: 5422287 (1995-06-01), So

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