Micro-machining minute hollow using native oxide membrane

Details Micro-machining minute hollow using native oxide membrane Micro-machining minute hollow using native oxide membrane

1996-05-28

1997-09-02

Niebling, John

Etching a substrate: processes

Etching of semiconductor material to produce an article...

216 39, 216 56, 216 60, 438701, 438708, 438719, C03C 2506

Patent

active

056628145

ABSTRACT:
A native oxide film is formed on the surface of a silicon substrate. The native oxide film has at least island-shaped imperfect SiO.sub.2 regions not formed with a perfect SiO.sub.2 film. Before the native oxide film is formed, a mask layer having a necessary opening is formed over the silicon substrate, according to necessity. The silicon substrate is etched in a vapor phase via the imperfect SiO.sub.2 regions of the native oxide film to form a hollow under the native oxide film at least at a partial region thereof. An upper film is formed on the native oxide film to cover and close the imperfect SiO.sub.2 regions. In this manner, a minute hollow can be formed in the silicon substrate with good controllability.

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Journal Of Applied Physics, vol. 76, No. 9, Nov. 1, 1994, "Ultraviolet Excited Ci-Radial Etching of Si Through Native Oxides", pp. 5498-5502., Sugino et al.
Applied Physics Lett., vol. 61, No. 1,, Jul. 6, 1992, "Nonuniformities of Native Oxides on Si (001) Surfaces formed During Wet Chemical Cleaning", pp. 102-104., Aoyama et al.

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