Radiation imagery chemistry: process – composition – or product th – Imaging affecting physical property of radiation sensitive... – Making electrical device
Patent
1996-10-15
1999-02-23
Duda, Kathleen
Radiation imagery chemistry: process, composition, or product th
Imaging affecting physical property of radiation sensitive...
Making electrical device
430328, G03F 740
Patent
active
058742000
ABSTRACT:
A method for forming a pattern for preventing the formation of water marks on a semiconductor substrate during drying the semiconductor substrate after forming a resist pattern on the semiconductor substrate using a photoresist, is disclosed. An insulating layer is formed on the semiconductor substrate and the resist pattern is formed on the insulating layer. The resist pattern is exposed to ultraviolet rays to reduce the hydrophobicity of the surface portion of the resist pattern. Then, the exposed portion of the insulating layer by the resist pattern is wet etched by using the resist pattern as an etching mask. The sheet off time of deionized water from the surface of the resist pattern is lengthened. The semiconductor substrate becomes relatively hydrophobic when compared to the resist pattern. And the sheet off time of the remaining deionized water on the semiconductor substrate is shorter than that of the deionized water on the resist pattern. Accordingly, the deionized water on the surface of the semiconductor substrate can be advantageously removed.
REFERENCES:
patent: 5384220 (1995-01-01), Sezi
Jo Kyung-Hwa
Ra Hyung-Joo
Daewoo Electronics Co. Ltd.
Duda Kathleen
LandOfFree
Method for forming a pattern preventing water mark formation does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for forming a pattern preventing water mark formation, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for forming a pattern preventing water mark formation will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-305255