Chemical solutions for removing metal-compound contaminants from

Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material

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134 2, 134 3, 252 791, 252 793, 438693, 438906, H01L 2100, C09K 1300

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056627696

ABSTRACT:
A process and solution for cleaning Fe contaminants bound to a metallized semiconductor surface after CMP planarization. The solution comprises a PH buffered solution including hydrofluoric acid and a ligand selected from a group consisting of citrates and EDTA.

REFERENCES:
patent: 3889753 (1975-06-01), Richardson
patent: 4090563 (1978-05-01), Lybarger et al.
patent: 5340370 (1994-08-01), Cadien et al.
patent: 5478436 (1995-12-01), Winebarger et al.
patent: 5509970 (1996-04-01), Shiramizu
Pak, "Impact of EDTA on junction and photolith qualities" Extended Abstracts, Oct. 1980, vol. 80, No. 2, pp. 1241-1243, see the whole document.
Kern, "Radiochemical study of semiconductor surface contamination," RCA Review, Jun. 1970, vol. 31, pp. 207-264, see p. 249, paragraph 2; table 6.
Kaufman et al, "Chemical-mechanical polishing for fabricating patterned W metal features as chip interconnects," Journal of the Electrochemical Society, vol. 138, No. 11, Nov. 1991.
Greer et al, "Process for removing wafer surface contaminants" IBM Technical Disclosure Bulletin, vol. 15, No. 8, Jan. 1973, p. 2358, see the whole document.

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