Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1995-09-21
1997-09-02
Powell, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
216 39, 216 62, 216 87, 257905, 438386, 438701, 438705, H01L 2100
Patent
active
056627688
ABSTRACT:
A process is disclosed for forming trenches having high surface-area sidewalls with undulating profiles. Such trenches are formed by first implanting multiple vertically separated layers of dopant in a substrate beneath a region where the trench is to be formed. Next, the trench is formed under conditions chosen to selectively attack highly doped substrate regions (i.e., substrate regions where the dopant has been implanted). The resulting trench sidewalls will have undulations corresponding to the positions of the implanted regions. In one case, the implanted layers contain germanium ions, and a trench is aniostropically etched through the layers of germanium. Thereafter, the trench is subjected to oxidizing conditions to form regions of germanium oxide. Finally, the trench is exposed to an aqueous solvent which dissolves germanium oxide, disrupting the silicon lattice, and leaving gaps or undulations in the sidewall.
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LSI Logic Corporation
Powell William
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