Abrading – Abrading process – Glass or stone abrading
Reexamination Certificate
2001-07-09
2003-07-08
Morgan, Eileen P. (Department: 3723)
Abrading
Abrading process
Glass or stone abrading
C451S036000, C451S011000, C438S692000, C156S345120, C156S345160
Reexamination Certificate
active
06589099
ABSTRACT:
FIELD OF INVENTION
The present invention generally relates to semiconductor manufacturing and, more particularly, to chemical-mechanical polishing (CMP) of metal films.
BACKGROUND OF THE INVENTION
Chemical-mechanical polishing (CMP) removes material from the top layer of a substrate in the production of ultra-high density integrated circuits. Often, the top layer is a metal film, but other materials can also be removed. In a typical CMP process, the top layer is exposed to an abrasive medium under controlled chemical, pressure, velocity, and temperature conditions. Conventional abrasive media comprises slurry solutions and polishing pads. The slurry solution can be provided shortly before use by mixing a so-called precursor with an oxidizing agent. The precursor lacks the oxidizing agent, but comprise the other components of the slurry (e.g., abrasive media, catalysts, water).
It is required that material is removed only to a predetermined film thickness; any further removal must be prevented. Endpointing techniques are used to determine whether the desired thickness has been reached or not. The polishing rate—that means the decrease of film thickness with the time—is very crucial. When the polishing rate is too high, the endpoint is easily missed; when the polishing rate is too low, the overall CMP processing time becomes too long.
The present invention seeks to provide an improved method which mitigates or avoids disadvantages and limitations of the prior art.
REFERENCES:
patent: 5244534 (1993-09-01), Yu et al.
patent: 5700180 (1997-12-01), Sandhu et al.
patent: 5846398 (1998-12-01), Carpio
patent: 5897375 (1999-04-01), Watts et al.
patent: 5980775 (1999-11-01), Grumbine et al.
patent: 5985045 (1999-11-01), Kobayashi
patent: 6001730 (1999-12-01), Farkas et al.
patent: 6066030 (2000-05-01), Uzoh
patent: 6066266 (2000-05-01), Osugi
patent: 6068787 (2000-05-01), Grumbine et al.
patent: 6070600 (2000-06-01), Grootegoed et al.
patent: 6117783 (2000-09-01), Small et al.
patent: 6326299 (2001-12-01), Homma et al.
patent: 6403468 (2002-06-01), Sugai
patent: 6413288 (2002-07-01), Yancey
patent: 6432828 (2002-08-01), Kaufman et al.
patent: 6436829 (2002-08-01), Layadi et al.
patent: 1085067 (2001-03-01), None
patent: 06106478 (1994-04-01), None
patent: 2000068272 (2000-03-01), None
patent: 2000306869 (2000-11-01), None
patent: 2001085376 (2001-03-01), None
Haggart, Jr. David Weston
Maltabes John
Mautz Karl Emerson
Morgan Eileen P.
Motorola Inc.
LandOfFree
Method for chemical mechanical polishing (CMP) with altering... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for chemical mechanical polishing (CMP) with altering..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for chemical mechanical polishing (CMP) with altering... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3026357