Method to prevent charging effects in electrostatic devices

Electrical generator or motor structure – Non-dynamoelectric – Charge accumulating

Reexamination Certificate

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Reexamination Certificate

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06483223

ABSTRACT:

FIELD OF THE INVENTION
The invention relates to the general field of electrostatic devices with particular reference to the prevention of charge accumulation during attachment/detachment cycles.
BACKGROUND OF THE INVENTION
Over the past several years, much progress has been made in the development of electrostatic actuators mainly through adoption of the same photolithographic and etching techniques as those employed for fabricating integrated circuits. Micro electromechanical systems (MEMS) devices employ small air gaps (below the Paschen minimum) so can sustain relatively large electric fields without breakdown. The electrostatic forces produced by these large fields are comparable to counteracting mechanical forces present in devices of this size, thereby making electrostatic control of motion and position feasible.
In
FIG. 1
we show, in schematic representation, an example of an electrostatic actuator based motor known as a wobble motor. The principal components are a rotor
12
. made of an insulating material, and a stator in the form of a tube inside which the rotor
12
rotates. This stator is, essentially, a series of electrodes
13
(the actuators) that are insulated from one another and from the rotor by being encased within dielectric material
14
. Voltage is successively applied to succeeding electrodes
13
in a constant direction, such as
10
, so that rotor
12
is constantly being attracted to the next actuator in line, resulting in its rotating in direction
11
.
FIG. 2
is an example of a linear motor having multiple stators such as
26
. Each such stator has the form of a rigid beam made up of (in this example) four actuators such as
27
or
28
encased in a dielectric
14
. The rotor
21
in this design is a beam of insulating, as well as flexible, material of a similar size and shape as the stator. Depending on which actuators are charged, the shape of the rotor can be altered. In
FIG. 2
, uncharged actuators (such as
27
) are shown as hatched while charged actuators (such as
28
) are shown as solid. Three possible shapes,
22
,
23
, and
24
, for the rotors are shown in this example. By cyclically adjusting the rotor shapes, rotary (via crankshaft) or linear (reciprocating) motion can be achieved.
Structures such as those just discussed, that utilize electrostatic forces to attract members into direct contact with one another, are known to suffer from charging effects whereby charge gradually builds up on the surface of the dielectric
14
. This charging behavior manifests itself in two ways: as a variation in the potential required to attract the members into contact and as a time delay in the separation of the members after the applied potential has been removed.
The problem has been classified as the attachment /detachment cycle and has been reported in a number of papers. For example, K. M. Anderson and J. E. Colgate in “A model of the attachment/detachment cycle of electrostatic micro actuators”, DSC Vol 32, Microelectromechanical Sensors, Actuators, and Systems, ASME 1991 pp 255-268, have identified several mechanisms which provide valid explanations for the observations. These include ionization in the air gap, tribo charging due to dissimilar materials, and surface micro conduction.
Ionization has been confirmed as a mechanism by Wibbler et al. (wibbeler J, Gunter P, and Hietschold M, “Parasitic charging of dielectric surfaces in Capacitive micro electromechanical systems (MEMS)”, Sensors and Actuators A71 (1998) pp 74-80).
Tribo charging is commonly eliminated by ensuring that the materials that are brought into contact with one another have similar work functions.
Surface microconduction can be minimized by reducing the contact area but this solution does not eliminate the problem.
Of interest, also, is work on the charging problem that was done in two fields unrelated to electrostatic microstructure, but using materials to which the present invention could be applied. These are “The design of quasi electrostatic induction actuators” by Egawa S, Niino, T, and Higuchi T, in “Film actuators: planar electrostatic surface-drive actuators”, (IEEE CH2957-9/91 pp. 9-14) and Egawa, S and Higuchi, T in “Multi-layered electrostatic film actuator”, (CH2832-4/90 pp 166-171). In the latter, low mobility of charge in high resistivity materials is exploited as a mechanism for generating force in a moving electrostatic field.
In the fabrication of high voltage integrated circuits, semi-insulating polysilicon (SIPOS) has been used as a means of passivating electronic structures and limiting the surface charge sensitivity and external electric field sensitivity of devices by providing a resistive field shield. For example, Jaume D, Charitat G, Reynes J M, and Rossel P in “High-voltage planar devices using field plate and semi-resistive layers”, (IEEE Transactions on Electron Devices Vol 38 No. 7 July 1991 pp 1681-1684); Held R, Serafin J, Fullmann M, Constapel R, and Korec J, in “Investigation of static and dynamic characteristics of SOI-LDMOSFETs passivated with semi-insulating layers”, (5th International Symposium on Power Semiconductor devices and IC's 1993 pp 130-134); and Charitat G, Jaume D, Peyre-Lavigne A, and Rossel P, in “1000 and 1500 volts planar devices using field plate and semi-resistive layers: design and fabrication”, (IEDM 90-803 pp. 32.5.1-32.5.4.
A routine search of the patented prior art was conducted but no references that teach the same solution to the charging problem as that disclosed in the present invention were uncovered. Of interest is a description by Cabuz et al. in U.S. Pat. 5,822,170 of a hydrophobic coating for reducing humidity effects in electrostatic actuators This addresses the effects of charging due to moisture related effects by a hydrophobic surface treatment.
SUMMARY OF THE INVENTION
It has been an object of the present invention to provide an electrostatically actuated device which is not subject to charging effects that either slow down the operation of the device, gradually increase the voltage required to operate the device, or cause parts of the device to adhere to each other at the wrong time.
Another object of the invention has been to provide a method for forming said electrostatic device.
A further object has been that said method not change significantly the operating characteristics of the device.
These objects have been achieved by replacing the dielectric material that is normally present between the force generating conductor surfaces with a semi-insulating material. This semi-insulating film overcomes the effects of charging, while avoiding short-circuits when the surfaces are pulled into contact. It is not subject to insulation breakdown within the range of voltages used to operate the device.


REFERENCES:
patent: 5235225 (1993-08-01), Colgate et al.
patent: 5822170 (1998-10-01), Cabuz et al.
patent: 6140737 (2000-10-01), Boie
patent: 6191518 (2001-02-01), Suzuki
patent: 6331257 (2001-12-01), Loo et al.
Akihiro Koga et al., “Attachment/Detachment Electrostatic Micro Actuators for Pan-Tilt Drive of a Micro CCD Camera”, Proceedings of the IEEE Micro Electro Mechanical Systems Workshop, Feb. 11-15, 1996, pp. 509-513.
Mark N. Horenstein et al., “Electrostatic Effects in Micromachined Actuators for Adaptive Optics”, Journal of Electrostatics 42 (1997) 69-81.
K.M. Anderson et al., “A Model of the Attachment/Detachment Cycle of Electrostatic Micro Actuators”, DSC vol. 32, Microelectromechanical Sensors, and Systems, ASME 1991, pp. 255-268.
Wibbeler et al., Parasitic Charging of Dielectric Surfaces in Capacitive Microelectromechanical Systems (MEMS), Sensors and Actuators A71 (1998) pp. 74-80.
Saku Egawa et al., “Film Actuators: Planar, Electrostatic Surface-Drive Actuators”, (IEEE CH2957-9/91 PP. 9-14).
Saku Egawa et al., “Multi-Layered Electrostatic Film Actuator”, (CH2832-4/90 pp. 166-171).
D. Jaume et al., “High-Voltage Planar Devices Using Field Plate and Semi-Resistive Layers”, (IEEE Transactions on Electron Devices), vol. 38, No. 7, Jul. 1991, pp. 1681-1684.
R. Held et al., “Investigation of

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