Semiconductor device

Details Semiconductor device Semiconductor device

2000-04-10

2002-10-15

Lee, Eddie (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S401000, C257S390000, C257S287000, C257S275000

Reexamination Certificate

active

06465850

ABSTRACT:

FIELD OF THE INVENTION
The invention relates to a semiconductor device, and especially to a semiconductor device provided with a field effect transistor (FET, hereinafter) having electrode pads for wire-bonding. The invention is suitably applied to a semiconductor device provided with a FET for amplifying a high output power in a radio frequency (RF) band.
BACKGROUND OF THE INVENTION
Hitherto, a chip used in a semiconductor device has been selected in accordance with a frequency in which the semiconductor device is used.
FIG. 1A
shows a wiring pattern of a conventional semiconductor device used in a lower frequency band, and a wire drawn out from a chip of a FET is connected with a gate pad
5
via a resistor
2
formed of highly resistive metal.
FIG. 1B
shows a wiring pattern of a conventional semiconductor device used in a RF band, and a wire drawn out from a chip is directly connected with a gate pad
5
.
Although the semiconductor device according to the wiring pattern shown in
FIG. 1A
can be used without an alteration in case that it is used in the lower frequency band if it is used in the RF band, the RF characteristic of the semiconductor device is inferior to that of a semiconductor device having no series resistor.
On the other hand, although a semiconductor device according to the wiring pattern shown in
FIG. 1B
can be used without an alteration in the RF band, if the aforementioned semiconductor device is used in a lower frequency band, a sufficient isolation cannot be secured in case that GL (a linear gain) is high, and the semiconductor device becomes unstable. Although it is possible to reduce GL by power matching in accordance with RF matching, RF characteristic (especially, addition efficiency) is inevitably deteriorated.
SUMMARY OF THE INVENTION
Accordingly, it is an object of the invention to provide a semiconductor device which solves the aforementioned problems, enables chips of a single kind operate at different frequencies, and satisfies various requirements small number of products.
According to the feature of the invention, a semiconductor device provided with a field effect transistor having electrode pads for wire-bonding, comprises:
a first electrode pad for wire-bonding directly connected with the field effect transistor, and
a second electrode pad for wire-bonding connected with the field effect transistor via a resistor.
According to the invention,high performance Si power MOSFETs with GL higher than 15 dB which are respectively provided with the same chips which can be used in different frequency bands without causing oscillations and deteriorations of RF characteristics by changing the positions of wire-bonding.


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