Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2001-03-08
2002-11-12
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S660000, C438S667000, C438S928000
Reexamination Certificate
active
06479382
ABSTRACT:
BACKGROUND OF THE INVENTION
1. Field of the Invention
The present invention relates to a dual-sided semiconductor chip and a method for forming the chip and, more particularly, to a dual-sided semiconductor chip and a method for forming the chip with a conductive path through the chip that connects elements on each side of the chip.
2. Description of the Related Art
A dual-sided semiconductor chip is a chip that has electrical circuits on both sides of a wafer. Thus, unlike more conventional semiconductor chips that utilize only one side of a wafer, a dual-sided chip utilizes both sides of the wafer. As a result, packaged dual-sided semiconductor chips consume significantly less circuit-board real estate than conventional single-sided chips.
FIG. 1
shows a cross-sectional drawing that illustrates a dual-sided semiconductor chip
100
. As shown in
FIG. 1
, chip
100
includes a wafer
110
that has a top side
112
and a bottom side
114
. As further shown in
FIG. 1
, chip
100
also includes an electrical circuit
120
which is formed on top side
112
, and an electrical circuit
122
which is formed on bottom side
114
. Electrical circuits
120
and
122
typically communicate with the outside world via wires that are connected to pads that form a part of circuits
120
and
122
.
Circuits
120
and
122
can perform related or unrelated functions. When related functions are performed, circuits
120
and
122
can exchange signals via a wire that is connected to a pad that forms a part of circuit
120
and a pad that forms a part of circuit
122
. Although this approach allows circuits
120
and
122
to exchange signals, there is a need for alternate techniques of exchanging signals.
SUMMARY OF THE INVENTION
The present invention provides a technique for exchanging signals on a dual-sided semiconductor chip by forming a low-resistance, conductive path through the wafer that allows elements on one side of the wafer to exchange signals (voltages and/or currents) with certain elements on the other side of the wafer.
The method of the present invention forms a dual-sided semiconductor chip from a wafer that has a top surface and a bottom surface. The method includes the step of forming a first opening in the wafer. The first opening extends through the wafer from the top surface to the bottom surface, and has side-wall surfaces.
The method also includes the step of forming a layer of insulation material on the side-wall surfaces. The method further includes the step of forming a layer of conductive material to contact the layer of insulation material and fillup the first opening.
The present invention also includes a dual-sided semiconductor device that is formed on a wafer that has a top surface and a bottom surface. The device includes an opening that is formed in the wafer. The opening extends through the wafer from the top surface to the bottom surface, and has side-wall surfaces. The device also includes a layer of insulation material that is formed on the side-wall surfaces. The device further includes a column of conductive material that is formed to contact the layer of insulation material and fill up the opening. The column has a top surface and a bottom surface.
A better understanding of the features and advantages of the present invention will be obtained by reference to the following detailed description and accompanying drawings that set forth an illustrative embodiment in which the principles of the invention are utilized.
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Lebentritt Michael S.
National Semiconductor Corporation
Pickering Mark C.
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