Method of making electrical contacts to gate structures in integ

Details Method of making electrical contacts to gate structures in integ Method of making electrical contacts to gate structures in integ

1990-06-29

1991-02-26

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437978, 437 56, 437 42, 437911, 148 43, 156653, H01L 2170

Patent

active

049961675

ABSTRACT:
Contacts to the gate electrode of a first field-effect transistor and the source/drain region of a second field-effect transistor are formed using a silicide as a local interconnect.

REFERENCES:
patent: 3673679 (1972-07-01), Carbajal, III et al.
patent: 3921283 (1975-11-01), Shappir
patent: 3943621 (1976-03-01), Hartman
patent: 4571816 (1986-02-01), Dingwall
patent: 4782037 (1988-11-01), Tomozawa et al.
patent: 4808552 (1989-02-01), Anderson

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