Semiconductor memory

Details Semiconductor memory Semiconductor memory

1994-03-01

1995-02-14

Fears, Terrell W.

Static information storage and retrieval

Systems using particular element

Capacitors

365 82, 257317, G11C 1140

Patent

active

053901444

ABSTRACT:
A p-type pillared layer, made of a silicon single crystal, is formed on a bit line formed of an n-type diffusion layer by expitaxial growth. An FET, in which a gate electrode is provided through an insulating film and a side surface of the pillared layer is served as a channel area, is formed around the pillared layer. Also, a lower electrode, formed of an n-type silicon layer contacting an upper portion of the pillared layer, an insulating film, and an upper electrode are sequentially provided to surround the FET, thereby constituting a capacitor. The receptive elements are overlaid on each other in a vertical direction, so that a processing margin becomes zero and the wire connecting the respective elements is omitted, and a degree of integration of a semiconductor memory can be improved.

REFERENCES:
patent: 4812898 (1989-03-01), Sumihiro

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