Plug filling for dual-damascene process

Details Plug filling for dual-damascene process Plug filling for dual-damascene process

2002-01-23

2002-12-03

Niebling, John F. (Department: 2812)

Fishing, trapping, and vermin destroying

Reexamination Certificate

active

06488509

ABSTRACT:

FIELD OF THE INVENTION
The present invention relates generally to semiconductor fabrication and more specifically to methods of forming dual-damascene structures.
BACKGROUND OF THE INVENTION
The current plug filling processes for dual-damascene processes have fencing issues or involve additional process steps and increased processing costs to alleviate the fencing issues.
U.S. Pat. No. 6,268,283 B1 to Huang describes a dual-damascene process using a resist cap in the dual-damascene opening.
U.S. Pat. No. 6,057,239 to Wang et al. describes a dual-damascene process using a sacrificial plug.
U.S. Pat. No. 6,033,977 to Gutsche et al. describes another dual-damascene process also using a sacrificial plug.
U.S. Pat. No. 6,096,655 to Lee et al., U.S. Pat. No. 5,635,423 to Huang et al. and U.S. Pat. No. 5,920,790 to Wetzel describe related dual-damascene processes.
SUMMARY OF THE INVENTION
Accordingly, it is an object of one or more embodiments of the present invention to provide an improved method of forming a dual-damascene structure.
Other objects will appear hereinafter.
It has now been discovered that the above and other objects of the present invention may be accomplished in the following manner. Specifically, a structure having a patterned low-k material layer formed thereover is provided. The patterned low-k material layer having an upper surface and at least one via hole formed therethrough. A plug material layer is formed over the patterned low-k material layer and filling the at least one via hole. The plug material layer being comprised of a material dissolvable in TMAH or deionized water. The plug material layer is developed to form a plug within the respective at least one via hole having a height below the upper surface of the patterned low-k material layer. The plug is baked to crosslink the plug material comprising the plug. A trench masking layer is formed and patterned to form a patterned trench masking layer having at least one trench substantially centered over the respective at least one via hole and exposing a portion of patterned low-k material layer adjacent the at least one via hole. Wherein the crosslinked plug material comprising the plug does not adversely interact with the trench masking layer. The patterned low-k material layer is etched at the exposed portion using the patterned trench masking layer as a mask to form a trench opening substantially centered over the via hole. The etching of the patterned low-k material layer also removing some of the plug to form a partially etched plug. The trench opening and the via hole comprising a dual-damascene opening. The partially etched plug is removed from the via hole. A planarized dual-damascene structure is formed within the dual-damascene opening.


REFERENCES:
patent: 5635423 (1997-06-01), Haung et al.
patent: 5877076 (1999-03-01), Dai
patent: 5920790 (1999-07-01), Wetzel et al.
patent: 6033977 (2000-03-01), Gutsche et al.
patent: 6057239 (2000-05-01), Wang et al.
patent: 6096655 (2000-08-01), Lee et al.
patent: 6268283 (2001-07-01), Huang
patent: 6399483 (2002-06-01), Liu et al.
patent: 6406995 (2002-06-01), Hussein et al.
patent: 6420261 (2002-07-01), Kudo
patent: 2002/0042193 (2002-04-01), Noguchi et al.

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