Semiconductor device having an insulated gate transistor

Details Semiconductor device having an insulated gate transistor Semiconductor device having an insulated gate transistor

1993-11-29

1995-06-27

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257530, 257901, H01L 2978

Patent

active

054282373

ABSTRACT:
An insulated gate type transistor includes a plurality of major electrode regions, a channel region provided between the plurality of major electrode regions, a gate electrode provided on the channel region with a gate insulating film therebetween, and a semiconductor region provided in contact with the channel region, the semiconductor region having the same conductivity type as that of the channel region and a higher impurity concentration than the channel region. The gate electrode has at least two opposing portions. The plurality of major electrode regions are provided on an substrate insulating film. The transistor is activated in a state where the semiconductor region is maintained at a predetermined voltage. A semiconductor device includes a plurality of memory cells, each of which includes the aforementioned insulated gate type transistor and an electrically breakable memory element provided on one of the major electrode regions.

REFERENCES:
patent: 4517583 (1985-05-01), Uchida
patent: 4571609 (1986-02-01), Hatano
patent: 4599705 (1986-07-01), Holmberg et al.
patent: 4996574 (1991-02-01), Shirasaki
patent: 5089870 (1992-02-01), Haond
patent: 5115289 (1992-05-01), Hisamoto et al.
patent: 5331197 (1994-07-01), Miyawaki et al.
Pat. Abs. Jp. vol. 15, No. 14, Jan. 11, 1991.
Pat. Abs. Jp. vol. 14, No. 156, Mar. 1990.
Int. Electronic Dev. Meeting, Dec. 1-4, 1985, Sato et al. "A New programmable cell etc." pp. 639-642.
Int. Electronic Dev. Meeting, Dec. 11-14, 1988, Takao et al. "High Performance CMOS etc.", pp. 222-225.
IEDM 1985, pp. 639-642, Sato et al. "A new programmable cell etc.".
IEDM 1988, pp. 222-225, Takato et al. "High Performance CMDS Surrounding Gate Transistor etc.".

Affiliated with

Also associated with

Rating

Semiconductor device having an insulated gate transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device having an insulated gate transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device having an insulated gate transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-289323