Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-03-26
1995-06-27
Larkins, William D.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
H01L 27108
Patent
active
054282365
ABSTRACT:
Disclosed is a memory having a p-type semiconductor substrate having a high impurity concentration a p-type semiconductor layer is formed on thereof; a groove which is formed so as to extend from a surface of the semiconductor layer to a position inside the semiconductor substrate; an impurity diffused region which is formed on portions of the semiconductor layer and the semiconductor substrate which define the groove; and an electrode which is formed from the groove to level at least above an opening of the groove through capacitor insulation film, the impurity diffused region, capacitor insulation film and electrode constituting trenched capacitor in which the electrode serves first capacitor electrode and the impurity diffused region serves as a second capacitor electrode.
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Kabushiki Kaisha Toshiba
Larkins William D.
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