Method of processing a polycide structure

Details Method of processing a polycide structure Method of processing a polycide structure

1992-12-28

1995-02-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

148DIG147, 437238, 437248, H01L 2144, H01L 2148

Patent

active

053895762

ABSTRACT:
A method substantially eliminating consumption of silicon from semiconductor devices is provided. The method includes controlling gases within the environment wherein the semiconductor device is positioned. The environment is formed to include an inert gas and oxygen. The oxygen content is formed to have a concentration between approximately 1.times.10.sup.1 and 1.times.10.sup.5 parts per million. Such an oxygen concentration substantially prevents converting silicon from the semiconductor device into silicon monoxide thereby substantially eliminating silicon consumption.

REFERENCES:
patent: 5075251 (1991-12-01), Torres et al.
patent: 5147820 (1992-09-01), Chittipeddi et al.
patent: 5168332 (1992-12-01), Kunishima et al.
R. Tromp et al, "Silicon Oxidation Studies" J. Electro Chem. Soc: Solid-State Science and Technol., vol. 125. No. 10, pp. 1708-1714, Oct. 1978.
E. A. Irene, "Silicon Oxidation Studies: Some Aspects of the Initial Oxidation Regime" Journal of the Electrochemical Society: Solid-State Science and Technology, vol. 125, No. 10, pp. 1708-1714, Oct. 1978.
R. Tromp et al, "High Temperature SiO.sub.2 Decomposition at the SiO.sub.2 /Si Interface", Physical Review Letters, vol. 55, No. 21, pp. 2332-2335, Nov. 18, 1985.
K. Hofman et al, "Defect Formation In Termal SiO.sub.2 by High-Temperature Annealing", Applied Physics Letter, vol. 49, No. 22, pp. 1525-1527, Dec. 1, 1992.

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