Method of making a dynamic random access memory device

Details Method of making a dynamic random access memory device Method of making a dynamic random access memory device

1993-10-29

1995-02-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437191, 437919, H01L 2172

Patent

active

053895681

ABSTRACT:
Disclosed is a dynamic random access memory device (DRAM) having an increased cell capacitance and simplified manufacturing method thereof. The storage electrode the capacitor of the DRAM is connected to a semiconductor substrate through an opening formed in an insulating layer, and has a structure having an outer peripheral wall portion with a laterally extending bottom on the insulating layer and an inner central pillar portion including a hole of a certain depth within the opening in the center of the outer peripheral wall portion. Thus, cell capacitance is greatly increased within a limited unit cell area, its reliability is enhanced, and the manufacturing process is distinctly simplified.

REFERENCES:
patent: 5114873 (1992-05-01), Kim et al.
patent: 5135883 (1992-08-01), Bae et al.
patent: 5158905 (1992-10-01), Ahn

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