Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having schottky gate
Reexamination Certificate
2001-06-22
2002-04-30
Lebentritt, Michael S. (Department: 2824)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having schottky gate
C438S199000, C438S217000
Reexamination Certificate
active
06380013
ABSTRACT:
FIELD OF THE INVENTION
The present invention relates to a method for fabricating a semiconductor device; and, more particularly, to a method for fabricating a transistor using an epitaxial channel and a laser thermal treatment.
DESCRIPTION OF PRIOR ART
Recently, low energy ion-implantation and epitaxial channel processes have been considered as a technique to form highly integrated circuits having a line width of 0.1 &mgr;m or less because these processes may improve the short channel effect (SCE) at a low threshold voltage.
FIG. 1
is a cross-sectional view illustrating a method for forming a conventional semiconductor device. As shown in
FIG. 1
, a channel ion-implantation layer
12
and an epitaxial silicon layer
13
are formed on a semiconductor substrate
11
in this order. Accordingly, to guarantee the quality of the semiconductor device, at least two conditions should be satisfied. First, a profile of the implanted boron ions should be maintained over the epitaxial growing process and the following thermal treatments. Second, since the epitaxial silicon layer
13
is used as a channel, a high-quality epitaxial layer should grow without any interfacial boundary between the epitaxial silicon layer
13
and the semiconductor substrate
11
.
However, as of now, the doping profile of the boron ions deteriorates at a temperature of 800° C. for the following epitaxial growing and a rapid thermal processing (RTP) at 950° C. for about 20 seconds. Also, since the epitaxial silicon layer grows on the semiconductor substrate into which the impurities are implanted, the impurities, such as oxygen, may form a layer between the epitaxial silicon layer and the semiconductor substrate. Such a layer may damage the physical characteristics of the epitaxial channel.
SUMMARY OF THE DISCLOSURE
A method for forming electrically stable semiconductor device by thermally treating a semiconductor substrate with a laser is disclosed.
A method for forming a thin semiconductor device having a decreased tunneling leakage current is also disclosed.
A method for forming a semiconductor device is disclosed which comprises the steps of: forming a delta doping layer having impurity ions on a semiconductor substrate with a low energy ion-implantation; activating the impurity ions within the delta doping layer by thermally treating a surface of the semiconductor substrate with a laser; forming a channel epitaxial layer on the semiconductor substrate; forming a gate insulation layer and a gate electrode on the channel epitaxial layer in this order; and forming a source/drain region in the semiconductor substrate.
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patent: 5151759 (1992-09-01), Vinal
patent: 5770485 (1998-06-01), Gardner et al.
patent: 6312981 (2001-11-01), Akamatsu et al.
patent: 6337248 (2002-01-01), Imai
patent: 2001/0025997 (2001-10-01), Onishi
patent: 2002/0001890 (2002-01-01), Lee
Hyundai Electronics Industries Co,. Ltd.
Lebentritt Michael S.
Marshall Gerstein & Borun.
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