Method of and apparatus for plasma processing of wafer

Details Method of and apparatus for plasma processing of wafer Method of and apparatus for plasma processing of wafer

1993-01-28

1995-02-14

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Delaminating processes adapted for specified product

Delaminating in preparation for post processing recycling step

156345, 118119, 118728, 118723MR, 427569, H01L 2100

Patent

active

053891970

ABSTRACT:
A method of down-flow type plasma processing, such as etching or ashing, on a wafer, in which a plasma of a reactant gas is formed by subjecting a reactant gas to a high frequency electromagnetic wave and only active species generated by the plasma is supplied onto the wafer while the plasma is shielded from the wafer, the method comprising the steps of mounting a wafer on a flat surface of a wafer stage; disposing an exhaust ring having a diameter greater than that of the wafer concentrically with the wafer; and exhausting through the entire exhaust gap formed between the flat surface of the wafer stage and one end of the exhaust ring. An apparatus for carrying out the method is also disclosed.

REFERENCES:
patent: 4836902 (1989-06-01), Kalnitsky et al.
patent: 5114529 (1992-05-01), Masuyama et al.
patent: 5181986 (1993-01-01), Ohiwa
patent: 5217559 (1993-06-01), Moslehi et al.
patent: 5302226 (1994-04-01), Yamazaki et al.
T. Tsuchiya et al., "Two Step Tapered Via Hole Etching Using Down Flow and Reactive Ion Etching," Proceedings of the Symposia on Reliability of Semiconductor Devices and Interconnection and Multilevel Metallization, Interconnection, and Contact Technologies, vol. 89-6, May 7, 1989, pp. 425-435.

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