Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-05-13
2008-05-13
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C257SE21414
Reexamination Certificate
active
07371625
ABSTRACT:
The present invention provides a method for a semiconductor device, which comprises the steps of forming a first conductive layer in contact with a semiconductor region, forming an insulating layer on the first conductive layer by one of droplet discharge and application, irradiating a portion of the insulating layer with laser light to form a mask pattern, and forming divided first conductive layers by etching with the use of the mask pattern as a mask.
REFERENCES:
patent: 5304407 (1994-04-01), Hayashi et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5580801 (1996-12-01), Maegawa et al.
patent: 5827775 (1998-10-01), Miles et al.
patent: 6013542 (2000-01-01), Yamazaki et al.
patent: 6183937 (2001-02-01), Tsai et al.
patent: 6580212 (2003-06-01), Friend
patent: 6989333 (2006-01-01), Watanabe et al.
patent: 7033951 (2006-04-01), Kido
patent: 2002/0105688 (2002-08-01), Katagami et al.
patent: 2002/0128515 (2002-09-01), Ishida et al.
patent: 2002/0163300 (2002-11-01), Duineveld et al.
patent: 2003/0030689 (2003-02-01), Hashimoto et al.
patent: 2003/0080436 (2003-05-01), Ishikawa
patent: 2003/0083203 (2003-05-01), Hashimoto et al.
patent: 2003/0129321 (2003-07-01), Aoki
patent: 2004/0005739 (2004-01-01), Furusawa
patent: 2004/0141023 (2004-07-01), Nakamura
patent: 2005/0043186 (2005-02-01), Maekawa et al.
patent: 2005/0095356 (2005-05-01), Nakamura et al.
patent: 2005/0158665 (2005-07-01), Maekawa et al.
patent: 2005/0163938 (2005-07-01), Yamazaki et al.
patent: 2005/0164423 (2005-07-01), Maekawa et al.
patent: 1388574 (2003-01-01), None
patent: 8-330595 (1996-12-01), None
patent: 09-260808 (1997-10-01), None
patent: 11-029873 (1999-02-01), None
patent: 11-251259 (1999-09-01), None
patent: 11-321073 (1999-11-01), None
patent: 11-326951 (1999-11-01), None
patent: 11-340129 (1999-12-01), None
patent: 2000-089213 (2000-03-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2000-275678 (2000-10-01), None
patent: 2002-215065 (2002-07-01), None
patent: 2002-273869 (2002-09-01), None
patent: 2003-109794 (2003-04-01), None
patent: 2003-133691 (2003-05-01), None
patent: 2003-178872 (2003-06-01), None
patent: 2003-209339 (2003-07-01), None
patent: 2003-209340 (2003-07-01), None
patent: 2003-318133 (2003-11-01), None
patent: 2004-167488 (2004-06-01), None
patent: 2004-188410 (2004-07-01), None
patent: WO-2005-047967 (2005-05-01), None
Office Action for U.S. Appl. No. 200510064080.8 dated Nov. 9, 2007.
Suzuki Yukie
Yamazaki Shunpei
Chaudhari Chandra
Costellia Jeffrey L.
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
LandOfFree
Semiconductor device and manufacturing method thereof,... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor device and manufacturing method thereof,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof,... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-2816051