Semiconductor device and manufacturing method thereof,...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257SE21414

Reexamination Certificate

active

07371625

ABSTRACT:
The present invention provides a method for a semiconductor device, which comprises the steps of forming a first conductive layer in contact with a semiconductor region, forming an insulating layer on the first conductive layer by one of droplet discharge and application, irradiating a portion of the insulating layer with laser light to form a mask pattern, and forming divided first conductive layers by etching with the use of the mask pattern as a mask.

REFERENCES:
patent: 5304407 (1994-04-01), Hayashi et al.
patent: 5438241 (1995-08-01), Zavracky et al.
patent: 5580801 (1996-12-01), Maegawa et al.
patent: 5827775 (1998-10-01), Miles et al.
patent: 6013542 (2000-01-01), Yamazaki et al.
patent: 6183937 (2001-02-01), Tsai et al.
patent: 6580212 (2003-06-01), Friend
patent: 6989333 (2006-01-01), Watanabe et al.
patent: 7033951 (2006-04-01), Kido
patent: 2002/0105688 (2002-08-01), Katagami et al.
patent: 2002/0128515 (2002-09-01), Ishida et al.
patent: 2002/0163300 (2002-11-01), Duineveld et al.
patent: 2003/0030689 (2003-02-01), Hashimoto et al.
patent: 2003/0080436 (2003-05-01), Ishikawa
patent: 2003/0083203 (2003-05-01), Hashimoto et al.
patent: 2003/0129321 (2003-07-01), Aoki
patent: 2004/0005739 (2004-01-01), Furusawa
patent: 2004/0141023 (2004-07-01), Nakamura
patent: 2005/0043186 (2005-02-01), Maekawa et al.
patent: 2005/0095356 (2005-05-01), Nakamura et al.
patent: 2005/0158665 (2005-07-01), Maekawa et al.
patent: 2005/0163938 (2005-07-01), Yamazaki et al.
patent: 2005/0164423 (2005-07-01), Maekawa et al.
patent: 1388574 (2003-01-01), None
patent: 8-330595 (1996-12-01), None
patent: 09-260808 (1997-10-01), None
patent: 11-029873 (1999-02-01), None
patent: 11-251259 (1999-09-01), None
patent: 11-321073 (1999-11-01), None
patent: 11-326951 (1999-11-01), None
patent: 11-340129 (1999-12-01), None
patent: 2000-089213 (2000-03-01), None
patent: 2000-188251 (2000-07-01), None
patent: 2000-275678 (2000-10-01), None
patent: 2002-215065 (2002-07-01), None
patent: 2002-273869 (2002-09-01), None
patent: 2003-109794 (2003-04-01), None
patent: 2003-133691 (2003-05-01), None
patent: 2003-178872 (2003-06-01), None
patent: 2003-209339 (2003-07-01), None
patent: 2003-209340 (2003-07-01), None
patent: 2003-318133 (2003-11-01), None
patent: 2004-167488 (2004-06-01), None
patent: 2004-188410 (2004-07-01), None
patent: WO-2005-047967 (2005-05-01), None
Office Action for U.S. Appl. No. 200510064080.8 dated Nov. 9, 2007.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Semiconductor device and manufacturing method thereof,... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and manufacturing method thereof,..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and manufacturing method thereof,... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2816051

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.