Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified configuration
Reexamination Certificate
2008-03-25
2008-03-25
Le, Dung A. (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified configuration
C257S751000, C257S752000, C257SE21583, C257SE21584
Reexamination Certificate
active
07348676
ABSTRACT:
After an insulation layer is formed on a substrate, a contact hole is formed through the insulation layer. A recessed plug is formed to partially fill up the contact hole. The recessed plug has a height substantially smaller than a depth of the contact hole. A metal wiring structure is formed on the recessed plug and on the insulation layer. A lower portion of the metal wiring structure, formed within the contact hole, prevents damage to the recessed plug during an etching process for forming the metal wiring structure. Therefore, the recessed plug may be formed without damage thereof even if an alignment error occurs between an etching mask and the recessed plug during metal wiring structure formation.
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patent: 5300455 (1994-04-01), Vuillermoz et al.
patent: 5451551 (1995-09-01), Krishnan et al.
patent: 5637924 (1997-06-01), Hibino
patent: 5689140 (1997-11-01), Shoda
patent: 6028362 (2000-02-01), Omura
patent: 2001/0004140 (2001-06-01), An et al.
patent: 08-031935 (1996-02-01), None
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English language abstract of Korea Publication No. 2004-0043219.
English language abstract of Japanese Publication No. 08-031935.
English language abstract of the Korean Publication No. 2000-0021230.
English language abstract of the Japanese Publication No. 2004-014543.
Le Dung A.
Marger & Johnson & McCollom, P.C.
Samsung Electronics Co,. Ltd.
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