Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

2008-07-29

2008-07-29

Tran, Minh-Loan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S383000, C257S384000, C257SE29013, C257SE29311

Reexamination Certificate

active

07405449

ABSTRACT:
A semiconductor device includes a semiconductor substrate, and a MOS transistor provided on the semiconductor substrate and having a channel type of a first conductivity, the MOS transistor comprising a semiconductor region of the first conductivity type including first and second channel regions, gate insulating films provided on the first and second channel regions, a gate electrode provided on the gate insulating films, and first and second source/drain regions which are located at a distance from each other so as to sandwich the first and second channel regions, the first and second source/drain regions contacting the semiconductor region of the first conductivity type and forming a Schottky junction.

REFERENCES:
patent: 2004/0026736 (2004-02-01), Grupp et al.
patent: 2004/0217430 (2004-11-01), Chu
patent: 2002-289871 (2002-10-01), None
Kedzierski et al.; “Complementary Silicide Source/Drain Thin-Body MOSFETs for the 20nm Gate Length Regime”; IEDM Technical Digest, pp. 57-60, (2000).
Yagishita; “Semiconductor Device and Method for Manufacturing the Same”; U.S. Appl. No. 11/116,328, filed Apr. 28, 2005.

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