Method of making nitride-based compound semiconductor...

Details Method of making nitride-based compound semiconductor... Method of making nitride-based compound semiconductor...

2008-03-25

2008-03-25

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C257SE21267

Reexamination Certificate

active

07348278

ABSTRACT:
A method of making a nitride-based compound semiconductor crystal has the step of growing a nitride-based compound semiconductor crystal with a predetermined thickness by using a nitride-based compound semiconductor substrate as a seed crystal. The nitride-based compound semiconductor substrate as the seed crystal is polished at both surfaces thereof.

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patent: 2002-343728 (2002-11-01), None
patent: 2003-178984 (2003-06-01), None

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