Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

2008-07-08

2008-07-08

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

On insulating substrate or layer

C438S151000, C438S164000, C257S357000, C257SE29022

Reexamination Certificate

active

07396709

ABSTRACT:
A semiconductor device includes a thin film transistor including a semiconductor layer that includes a channel region, a source region and a drain region, a gate insulating film provided on the semiconductor layer, and a gate electrode for controlling the conductivity of the channel region, wherein the surface of the semiconductor layer includes a minute protruding portion, and the side surface inclination angle of the gate electrode is larger than the inclination angle of the protruding portion of the semiconductor layer.

REFERENCES:
patent: 5953085 (1999-09-01), Shimada
patent: 6827107 (2004-12-01), Mussler
Naoki Makita; “Semiconductor device and method for manufacturing the same”: U.S. Appl. No. 10/734,312; filed Dec. 15, 2003.

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