Structure and method for measuring the channel boosting...

Details Structure and method for measuring the channel boosting... Structure and method for measuring the channel boosting...

2008-06-24

2008-06-24

Nguyen, VanThu (Department: 2824)

Static information storage and retrieval

Read/write circuit

Testing

C365S185050, C365S185170

Reexamination Certificate

active

07391663

ABSTRACT:
Provided is a structure for testing a NAND flash memory including a string select transistor, a source select transistor, flash memory cells connected in series between the string select transistor and a source select transistor and a measurement pad coupled to a node between a flash memory cell and the string select transistor or the source select transistor.

REFERENCES:
patent: 5606527 (1997-02-01), Kwack et al.
patent: 6175523 (2001-01-01), Yang et al.
patent: 6240020 (2001-05-01), Yang et al.
patent: 6252800 (2001-06-01), Chida

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