Semiconductor device and method of manufacturing...

Details Semiconductor device and method of manufacturing... Semiconductor device and method of manufacturing...

2008-03-25

2008-03-25

Ho, Tu-Tu (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S411000, C257SE21192, C438S216000, C438S287000, C438S591000, C438S786000

Reexamination Certificate

active

07348644

ABSTRACT:
Disclosed is a semiconductor device comprising a substrate, an insulating film formed above the substrate and containing a metal, Si, N and O, the insulating film containing metal-N bonds larger than the sum total of metal-metal bonds and metal-Si bonds, and an electrode formed above the insulating film.

REFERENCES:
patent: 7053455 (2006-05-01), Koike et al.
patent: 2002/0098627 (2002-07-01), Pomarede et al.
patent: 2002/0146916 (2002-10-01), Irino et al.
patent: 2002/0149065 (2002-10-01), Koyama et al.
patent: 2003/0164525 (2003-09-01), Rotondaro et al.
patent: 2004/0147101 (2004-07-01), Pomarede et al.
patent: 2003-77911 (2003-03-01), None
M. R. Visokay, et al.; “Application of HfSiON as a Gate Dielectric Material”; Applied Physics Letters, vol. 80; No. 17; Apr. 29, 2002; pp. 3183-3185.

Affiliated with

Also associated with

Rating

Semiconductor device and method of manufacturing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method of manufacturing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method of manufacturing... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2806597