Non-volatile memory cell and manufacturing method thereof

Details Non-volatile memory cell and manufacturing method thereof Non-volatile memory cell and manufacturing method thereof

2008-06-17

2008-06-17

Vu, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C438S257000

Reexamination Certificate

active

07388250

ABSTRACT:
A non-volatile memory cell includes a substrate, a first isolation structure positioned in a first region on the substrate, a second isolation structure surrounding a second region on the substrate, a control gate positioned on the first isolation structure in the first region, a first insulating layer positioned on the control gate, a second insulating layer positioned on the portion of the substrate in the second region, and a floating gate positioned on the first insulating layer and the second insulating layer.

REFERENCES:
patent: 5656840 (1997-08-01), Yang
patent: 5716865 (1998-02-01), Ahn
patent: 6207507 (2001-03-01), Wang
patent: 6501124 (2002-12-01), Kim
patent: 2004/0142525 (2004-07-01), Kim

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