Precursor, thin layer prepared including the precursor,...

Details Precursor, thin layer prepared including the precursor,... Precursor, thin layer prepared including the precursor,...

2008-05-13

2008-05-13

Nazario-Gonzalez, Porfirio (Department: 1621)

Coating processes

Coating by vapor, gas, or smoke

Mixture of vapors or gases utilized

C257S040000, C562S899000

Reexamination Certificate

active

07371429

ABSTRACT:
A Te precursor containing Te, a 15-group compound (for example, N) and/or a 14-group compound (for example, Si), a method of preparing the Te precursor, a Te-containing chalcogenide thin layer including the Te precursor, a method of preparing the thin layer; and a phase-change memory device. The Te precursor may be deposited at lower temperatures for forming a Te-containing chalcogenide thin layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si). For example, the Te precursor may employ plasma enhanced chemical vapor deposition (PECVD) or plasma enhanced atomic layer deposition (PEALD) at lower deposition temperatures. The GST phase-change layer doped with a 15-group compound (for example, N) and/or a 14-group compound (for example, Si) formed by employing the Te precursor may have a decreased reset current, and thus when a memory device including the same is employed, its integration may be possible, and operation with higher capacity and/or higher speed may be possible.

REFERENCES:
patent: 6752869 (2004-06-01), Lee et al.
patent: 2003/0185981 (2003-10-01), Min et al.
patent: 2006/0049447 (2006-03-01), Lee et al.
patent: 2006/0138393 (2006-06-01), Seo et al.
patent: 1067595 (2001-01-01), None
patent: 2002-0084616 (2002-11-01), None
patent: 10-2003-0058595 (2003-07-01), None
patent: 1020040076225 (2004-08-01), None
patent: 10-2004-0100499 (2004-12-01), None
Björgvinsson et al., Inorganic Chemistry, vol. 29, No. 26, pp. 5140-5143 (1990).
Bunton et al., IEEE Transaction on Electron Devices, vol. ED-20, No. 2, pp. 140-144(1973).
Liu et al., Semiconductor Science and Technology, vol. 19, pp. L61-L64 (2004).
Korean Office Action dated Jul. 20, 2006 w/English translation.

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