Semiconductor device and fabrication process thereof, and...

Details Semiconductor device and fabrication process thereof, and... Semiconductor device and fabrication process thereof, and...

2008-03-04

2008-03-04

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257S328000, C257S344000, C257SE29261

Reexamination Certificate

active

07339234

ABSTRACT:
An LDMOS transistor includes a gate insulation film formed on a semiconductor substrate, a gate electrode formed on the gate insulation film, a drain well of a first conductivity type formed in the substrate so as to include a gate region covered with the gate electrode, a channel well of a second conductivity type formed in the drain well in a partially overlapped relationship with the gate region, a source region of the first conductivity type formed in the channel well in an overlapping manner or adjacent with a side surface of the gate electrode, a medium-concentration drain region of the first conductivity type having an intermediate concentration level and formed in the drain well at a side opposing to the source region in a manner partially overlapping with the gate region, the medium-concentration drain region being formed with a separation from the channel well, a drain region of the first conductivity type formed in the medium-concentration drain region with a separation from the gate region, a low concentration well of the second conductivity type formed inside the drain well so as to include at least a part between said channel well and the medium-concentration drain region.

REFERENCES:
patent: 7-302903 (1995-11-01), None
patent: 8-107202 (1996-04-01), None
patent: 10-335663 (1998-12-01), None
patent: 2003-86790 (2003-03-01), None

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