Semiconductor integrated circuit and a semiconductor device

Details Semiconductor integrated circuit and a semiconductor device Semiconductor integrated circuit and a semiconductor device

2008-03-18

2008-03-18

Gurley, Lynne (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S327000, C257S336000, C257S337000, C257S338000, C257S339000, C257S340000, C257S341000, C257S342000, C257SE27033, C326S083000, C323S282000, C323S283000, C315S287000

Reexamination Certificate

active

07345340

ABSTRACT:
A semiconductor integrated circuit that has a quick response to changes in source/drain electrode voltage having an LDMOS transistor. The transistor has a second conduction type first well region formed in a first conduction type semiconductor substrate; a first conduction type second well region formed in the first well region; a second conduction type third well region formed in the second well region; a drain region formed in the second well region; a source region formed in the third well region; a gate electrode formed through a gate insulating film over the third well region between the drain region and the source region; and an insulating layer formed between the gate electrode and the drain region. Parasitic capacitances between the semiconductor substrate and the source region and those between the substrate and the drain region are respectively in series.

REFERENCES:
patent: 6911694 (2005-06-01), Negoro et al.
patent: 2000-022142 (2000-01-01), None
patent: 2001-308321 (2001-11-01), None
patent: 2002-176173 (2002-06-01), None

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