Method of fabricating memory device utilizing carbon nanotubes

Details Method of fabricating memory device utilizing carbon nanotubes Method of fabricating memory device utilizing carbon nanotubes

2008-05-27

2008-05-27

Nhu, David (Department: 2818)

Semiconductor device manufacturing: process

Making passive device

C438S238000, C438S513000, C438S680000, C257SE21008, C257S017000, C257S041000, C257S277000, C257S645000, C257SE51008, C257S004000, C257S038000, C257SE23007, C257S074000, C257S165000

Reexamination Certificate

active

07378328

ABSTRACT:
A fast, reliable, highly integrated memory device formed of a carbon nanotube memory device and a method for forming the same, in which the carbon nanotube memory device includes a substrate, a source electrode, a drain electrode, a carbon nanotube having high electrical and thermal conductivity, a memory cell having excellent charge storage capability, and a gate electrode. The source electrode and drain electrode are arranged with a predetermined interval between them on the substrate and are subjected to a voltage. The carbon nanotube connects the source electrode to the drain electrode and serves as a channel for charge movement. The memory cell is located over the carbon nanotube and stores charges from the carbon nanotube. The gate electrode is formed in contact with the upper surface of the memory cell and controls the amount of charge flowing from the carbon nanotube into the memory cell.

REFERENCES:
patent: 6423583 (2002-07-01), Avouris et al.
patent: 6515339 (2003-02-01), Shin et al.
patent: 7015500 (2006-03-01), Choi et al.
patent: 2001/0001681 (2001-05-01), Zhang et al.
patent: 2001/0023986 (2001-09-01), Mancevski
patent: 2002/0004136 (2002-01-01), Gao et al.
patent: 2002/0153160 (2002-10-01), Hofmann et al.
patent: 1 091 418 (2001-04-01), None
Tans, S.J. “Room-temperature transistor based on a single carbon nanotube”, NATURE, 393:49-52 (May 7, 1998).
Tans, S.J., “Potential modulations along carbon nanotubes”, NATURE, 404:834-835, (Apr. 20, 2000).
Choi, W.B., et al., “Carbon-nanotube-based nonvolatile memory with oxide-nitride-oxide film and nanoscale channel”, Applied Physics Letters, 82(2):275-277, (Jan. 13, 2003).

Affiliated with

Also associated with

Rating

Method of fabricating memory device utilizing carbon nanotubes does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of fabricating memory device utilizing carbon nanotubes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of fabricating memory device utilizing carbon nanotubes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2802750