Semiconductor device with power supply impurity region

Details Semiconductor device with power supply impurity region Semiconductor device with power supply impurity region

2008-05-13

2008-05-13

Mai, Anh D. (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S335000, C257SE27098, C438S163000

Reexamination Certificate

active

07372105

ABSTRACT:
A semiconductor device in which by fixing a well at a predetermined potential via a contact within a memory cell, latch-up immunity is improved without accompanying increase in the area of the memory cell, and of which manufacture is facilitated, and a manufacturing method thereof. In a semiconductor device including MOS transistors each having an N-type impurity region110formed in a P-well101provided in a silicon substrate100thereof and including a GND contact130for supplying a GND potential to the P-well101, a portion of an impurity region110is etched and removed. Then, a P-type diffusion layer131for power supply is formed in the etched and removed region in the silicon substrate. Power supply to the P-well101is then performed via the GND contact130connected to the power supply diffusion layer131.

REFERENCES:
patent: 4657628 (1987-04-01), Holloway et al.
patent: 4879254 (1989-11-01), Tsuzuki et al.
patent: 5879968 (1999-03-01), Kinzer
patent: 6051860 (2000-04-01), Odanaka et al.
patent: 6500705 (2002-12-01), Kumagai
patent: 6538275 (2003-03-01), Sugiyama et al.
patent: 6569742 (2003-05-01), Taniguchi et al.
patent: 6885529 (2005-04-01), Ker et al.
patent: 2004/0007744 (2004-01-01), Cho et al.
patent: 2004-47933 (2004-02-01), None
Chinese Office Action, Jun. 8, 2007, Application No. 2005100754438.

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