Semiconductor device having separation region

Details Semiconductor device having separation region Semiconductor device having separation region

2008-06-17

2008-06-17

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S341000, C257S343000, C257S141000, C257S162000, C257SE21382, C257SE21384, C257SE21628, C257SE29027

Reexamination Certificate

active

07388255

ABSTRACT:
A semiconductor device includes: a semiconductor substrate; a separation region in the substrate; an embedded layer; a channel forming region; a source region; a drain region; a first electrode for the source region; a second electrode for the channel forming region; a third electrode for the drain region; a trench penetrating the channel forming region between the source region and the drain region; a trench gate electrode in the trench; an offset layer on a portion to be a current path provided by the trench gate electrode; and an electric field relaxation layer under the channel forming region and the offset layer connected to the channel forming region and covering a bottom of the trench.

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Office Communication issued from German Patent Office dated Feb. 25, 2008 for related German application No. 10 2006 053 145.0-33 (a copy of English translation enclosed.).

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