Method for producing a single crystal and a single crystal

Details Method for producing a single crystal and a single crystal Method for producing a single crystal and a single crystal

2008-01-29

2008-01-29

Hiteshew, Felisa (Department: 1722)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S013000, C117S015000, C117S019000

Reexamination Certificate

active

07323048

ABSTRACT:
A method for producing a single crystal in which when the single crystal is grown by Czochralski method, V/G is controlled by controlling a fluctuation of a temperature gradient G of the crystal which is being pulled without lowering a pulling rate V, thereby the single crystal including a desired defect region over a whole plane in a radial direction of the crystal entirely in a direction of the crystal growth axis can be produced effectively for a short time at a high yield.

REFERENCES:
patent: 5919302 (1999-07-01), Falster et al.
patent: 6482260 (2002-11-01), Sakurada et al.
patent: A 11-147786 (1999-06-01), None
patent: A 2000-313691 (2000-11-01), None
patent: A 2002-057160 (2002-02-01), None
Voronkov, “The Mechanism of Swirl Defects Formation in Silicon,” Journal of Crystal Growth, vol. 59, pp. 625-643, 1982.
Dupret et al., “Global Modelling of Heat Transfer in Crystal Growth Furnaces,” Int. J. Heat Mass Transfer, vol. 33, No. 9, pp. 1849-1871, 1990.

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