Method of forming a recessed structure employing a reverse...

Details Method of forming a recessed structure employing a reverse... Method of forming a recessed structure employing a reverse...

2008-01-29

2008-01-29

Lee, Calvin (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C216S041000

Reexamination Certificate

active

07323417

ABSTRACT:
The present invention provides a method of forming recesses on a substrate, the method including forming on the substrate a patterning layer having first features; trim etching the first features to define trimmed features having a shape; and transferring an inverse of the shape into the substrate.

REFERENCES:
patent: 7186656 (2007-03-01), Sreenivasan
patent: 2004/0211754 (2004-10-01), Sreenivasan

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