Method of selective tungsten deposition on a silicon surface

Details Method of selective tungsten deposition on a silicon surface Method of selective tungsten deposition on a silicon surface

Filed on

2008-01-29

Date issued

2008-01-29

Examiner

Everhart, Caridad (Department: 2891)

Patent Class

Semiconductor device manufacturing: process

SubClass

Coating with electrically or thermally conductive material

SubSubClass

To form ohmic contact to semiconductive material

Other Related Categories

C257SE21170, C438S677000, C438S680000, C427S096800, C427S124000

Type

Reexamination Certificate

Status

active

Patent number

07323411

Description

ABSTRACT:
In one embodiment, a selective tungsten deposition process includes the steps of pre-flowing silane into a deposition chamber, pumping down the chamber, and then selectively depositing tungsten on a silicon surface. The silane pre-flow helps minimize silicon consumption, while the pump down helps prevent loss of tungsten selectivity to silicon.

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Yamamoto, Y., et al. “H-termination effects on initial growth characteristics of W on Si using WF6 and SiH4 gases” Journal de Physique IV (Proceedings) (Sep. 1999), vol. 9, No. 8, No. 8, (Abstract).
Kow-Ming Chang et al., “A Simple and Efficient Pretreatment Technology for Selective Tungsten Deposition in Low-Pressure Chemical Vapor Deposition Reactor” Dec. 1994, pp. 7071-7075, vol. 33, Part 1, No. 12B, Japanese Journal of Applied Physics.
Kow-Ming Chang et al., “Influences of damage and contamination from reactive ion etching on selective tungsten deposition in a low-pressure chemical-vapor-deposition reactor” Sep. 1, 1996, pp. 3056-3061, vol. 80, No. 5, Journal of Applied Physics.
Kow-Ming Chang et al., “Interface Characteristics of Selective Tungsten on Silicon Using a New Pretreatment Technology for ULSI Application” May 1997, pp. 738-743, vol. 44, No. 5, IEEE Transactions on Elecron Devices.

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