Semiconductor device manufacturing method including forming...

Details Semiconductor device manufacturing method including forming... Semiconductor device manufacturing method including forming...

2008-07-15

2008-07-15

Quach, Tuan N. (Department: 2826)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S655000, C257SE21165

Reexamination Certificate

active

07399701

ABSTRACT:
The present invention provides a semiconductor device manufacturing method of a semiconductor device having a contact plug, in which a contact hole formed by a surface portion of a high-concentration N-type diffusion layer formed on a semiconductor silicon substrate surface and an interlayer insulating film is implanted with indium ions at an energy ranging from 30 to 120 keV and an implantation amount ranging from 1.0×1013/cm2to 5.0×1014/cm2to grow an indium-containing layer on the surface portion of the high-concentration N-type diffusion layer at the bottom of the contact hole.

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Taiwanese Office Action issued in Taiwanese Patent Application No. TW 095116097, dated May 5, 2008.

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