Metal filled through via structure for providing vertical...

Details Metal filled through via structure for providing vertical... Metal filled through via structure for providing vertical...

2008-03-18

2008-03-18

Rose, Kiesha L. (Department: 4176)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Thinning of semiconductor substrate

C438S672000, C257SE21577

Reexamination Certificate

active

07344959

ABSTRACT:
A method of fabricating a through via connection useful in providing a vertical wafer-to-wafer interconnect structure is provided as well as the vertical interconnect structure that is formed by this method. The method of the present invention using only a metal stud for the vertical connection therefore no alpha radiation is generated by the metal stud. The method of the present invention includes an inserting step, a heating step, a thinning step and backside processing.

REFERENCES:
patent: 6444560 (2002-09-01), Pogge et al.
patent: 2006/0121690 (2006-06-01), Pogge et al.

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