MOS Devices with different gate lengths and different gate...

Details MOS Devices with different gate lengths and different gate... MOS Devices with different gate lengths and different gate...

2008-04-08

2008-04-08

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257SE21637, C257SE21638, C257S392000, C257S500000, C438S275000

Reexamination Certificate

active

07355256

ABSTRACT:
A semiconductor device1according to the present invention includes a semiconductor substrate5, a first transistor10which is formed on the semiconductor substrate5and includes a first gate electrode portion16constituted by a first gate insulating film24and a first gate electrode26having a first gate length L1which are stacked, and a second transistor12which is formed on the semiconductor substrate5and includes a second gate electrode portion20constituted by a second gate insulating film32and a second gate electrode30having a second gate length L2smaller than the first gate length L1, the second gate insulating film32and the second gate electrode30being stacked, wherein the grain size of poly-silicon grains forming the first gate electrode26is greater than the grain size of poly-silicon grains forming the second gate electrode30.

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