Semiconductor device using an interconnect

Details Semiconductor device using an interconnect Semiconductor device using an interconnect

2008-01-22

2008-01-22

Lebentritt, Michael (Department: 2812)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C257S734000, C257SE21584

Reexamination Certificate

active

07320935

ABSTRACT:
The present invention includes an embodiment that relates to method of forming an interconnect. The method includes the effect of reducing electromigration in a metallization. An article achieved by the inventive method includes a first interconnect disposed above a substrate; a first conductive diffusion barrier layer disposed above and on the first interconnect; an upper interconnect, that is either landed or unlanded and that is disposed above the first interconnect; and an upper conductive diffusion barrier layer disposed above and on the upper interconnect.

REFERENCES:
patent: 5972786 (1999-10-01), Hoshino
patent: 5994217 (1999-11-01), Ng
patent: 6037664 (2000-03-01), Zhao et al.
patent: 6100184 (2000-08-01), Zhao et al.
patent: 6287955 (2001-09-01), Wang et al.
patent: 6326305 (2001-12-01), Avanzino et al.
patent: 6372665 (2002-04-01), Watanabe et al.
patent: 6380625 (2002-04-01), Pramanick et al.
patent: 6441490 (2002-08-01), Ngo et al.
patent: 6476498 (2002-11-01), Marathe
patent: 2002/0076925 (2002-06-01), Marieb et al.

Affiliated with

Also associated with

Rating

Semiconductor device using an interconnect does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device using an interconnect, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device using an interconnect will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2795345