Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2011-08-02
2011-08-02
Tran, Long K (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S294000, C257S500000, C257SE21380, C257SE21625, C257SE21639
Reexamination Certificate
active
07989896
ABSTRACT:
A method of fabricating a semiconductor device according to one embodiment includes: laying out a first region, a second region, a third region and a fourth region on a semiconductor substrate by forming an element isolation region in the semiconductor substrate; forming a first insulating film on the first region and the second region; forming a first semiconductor film on the first insulating film; forming a second insulating film and an aluminum oxide film thereon on the fourth region after forming of the first semiconductor film; forming a third insulating film and a lanthanum oxide film thereon on the third region after forming of the first semiconductor film; forming a high dielectric constant film on the aluminum oxide film and the lanthanum oxide film; forming a metal film on the high dielectric constant film; forming a second semiconductor film on the first semiconductor film and the metal film; and patterning the first insulating film, the first semiconductor film, the second insulating film, the aluminum oxide film, the third insulating film, the lanthanum oxide film, the high dielectric constant film, the metal film and the second semiconductor film.
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Aoyama Tomonori
Inumiya Seiji
Nakajima Kazuaki
Shimizu Takashi
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Tran Long K
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