Trench MOSFET with trenched floating gates as termination

Details Trench MOSFET with trenched floating gates as termination Trench MOSFET with trenched floating gates as termination

2011-08-02

2011-08-02

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S329000, C257S331000, C257S332000, C257S333000, C257S341000, C257S374000, C257SE29201

Reexamination Certificate

active

07989887

ABSTRACT:
A trench MOSFET comprising a plurality of transistor cells with a plurality of wide trenched floating gates as termination region is disclosed. The trenched floating gates have trench depth equal to or deeper than body junction depth of body regions in termination area. Each body region between two adjacent said trenched floating gates has floating voltage.

REFERENCES:
patent: 7781826 (2010-08-01), Mallikararjunaswamy et al.
patent: 2009/0108343 (2009-04-01), Nemtsev et al.
patent: 2010/0044796 (2010-02-01), Hshieh

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