Semiconductor device having nitridated oxide layer and...

Details Semiconductor device having nitridated oxide layer and... Semiconductor device having nitridated oxide layer and...

2008-03-04

2008-03-04

Luu, Chuong Anh (Department: 2818)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S369000, C438S775000, C438S200000

Reexamination Certificate

active

07338894

ABSTRACT:
A semiconductor device includes a substrate (12), a first insulating layer (14) over a surface of the substrate (12), a layer of nanocrystals (13) over a surface of the first insulating layer (14), a second insulating layer (15) over the layer of nanocrystals (13). A nitriding ambient is applied to the second insulating layer (15) to form a barrier to further oxidation when a third insulating layer (22) is formed over the substrate (12). The nitridation of the second insulating layer (15) prevents oxidation or shrinkage of the nanocrystals and an increase in the thickness of the first insulating layer14without adding complexity to the process flow for manufacturing the semiconductor device (10).

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Lai, “Tunnel Oxide and ETOX™ Flash Scaling Limitation,” IEEE 1998 Int'l Nonvolatile Memory Technology Conference, pp. 6-7.
Cavins et al., “A Nitride-Oxide Blocking Layer for Scaled SONOS Non-Volatile Memory,”Motorola, Inc., Jan. 10, 2002, 3 pages.

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